Characteristics and applications of Fullerene-based ReRAM

Pei-Fang Chung^1,2*, Mon-Shu Ho^1,2

¹Physics, National Chung Hsing University, Taichung, Taiwan
²Innovation and Development Center of Sustainable Agriculture (IDCSA), National Chung Hsing University, Taichung, Taiwan

* Presenter:Pei-Fang Chung, email:pfchung123@gmail.com

In this work, we anticipate the performance of fullerene based ReRAM (Resistive Random access Memory device；ReRAM) model owing to its outstanding electric and magnetic characteristic. Few layers of fullerene molecules (C₈₄) ultrathin film were assembled thermally on Si(111)-7×7 substrates under ultra-high vacuum. The top-electrode Pt (50nm) was deposited by RF magnetron sputtering on C₈₄ film. The surface electronic states and magnetic characteristics of C₈₄ film were studied by UHV-STM (Ultra High Vacuum Scanning Tunneling Microscope) and MFM (Magnetic Force Microscope). The ferromagnetic domain has been discovered along the domain boundaries on proposed Silicon substrate due to the quantum confinement along with localized unpaired electrons in fullerene molecules. To investigate more detailed information about the variations in the electronic and the chemical binding feature, we characterized the binding features and the photoelectric properties with Raman, XPS (X-Ray photoelectric spectroscopy) and VT-PL (variable temperature photoluminescence). We declare the resistance switching behavior and mechanism of the memory devices were attributed to the formation and rupture of conductive filaments.

Keywords: Fullerene , STM, Resisitve switching, ReRam