Negative Capacitance and Inductance Behavior of Multi-domain Ferroelectric ZrO2 Thin Film deposited from Plasma-enhanced Atomic Layer Deposition (PEALD)
Yu-Tung Yin1*, Yu-Sen Jiang1, Po-Hsien Cheng2, Lain-Jong Li2, Samuel C. Pan2, Jay Shieh1, Makoto Shiojiri3, Miin-Jang Chen1,4
1Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan
2Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
3Department of Physics, Kyoto Institute of Technology, Kyoto, Japan
4Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan
* Presenter:Yu-Tung Yin,
A ZrO2 thin-film with ferroelectric properties has been deposited from a specific plasma-enhanced atomic layer deposition (PEALD) process. Under nano-beam electron diffraction (EBED) and TEM dark-field image analysis, a distinctive periodically arranged crystalline has been observed, which implies the existence of a multi-domain structure in the ZrO2 thin film. Based on the existence of positive imaginary part in impedance measurement, enhancement of the small-signal capacitance for the series-connected capacitor, sub-60mV/dec subthreshold swing in nanoscale transistors, and large-signal RLC oscillations in time domain analysis, the inductance property induced by the net polarization switching were observed in the ZrO2 thin film with the multi-domain structure. The net polarization switching of multi-domain ZrO2 induces an effective electromotive force, whose behavior is nearly identical to Lenz’s law, leading to the inductive responses and negative capacitance characteristics. As compared with conventional inductors, multi-domain ZrO2 thin films exhibit superior inductance behavior, which would become a promising material in a verity of applications, including nanoscale transistors, filters, oscillators, and radiofrequency integrated circuits.

Keywords: negative capacitance, ferroelectricity, inductance, multi-domain, ZrO2