Exploring Interface Properties of Group III-VI Layered Materials
Yi-Ying Lu1*, Yan-Ting Huang1, He-Wen Chen1, Liang-Wei Lan1, Golda Filipina Gianan1, Ting Chen1, Chein-Cheng Kuo1, Chia-Hao Chen2, Ching-Hwa Ho3, Raman Sankar4,5, Fang-Cheng Chou4,6
1Department of Physics, National Sun Yat-Sen Univesity, Kaohsiung, Taiwan
2National Synchrotron Radiation Research Center, Hsinchu, Taiwan
3Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, Taiwan
4Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
5Institute of Physics, Academia Sinica, Taipei, Taiwan
6Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taipei, Taiwan
* Presenter:Yi-Ying Lu, email:yiyinglu@g-mail.nsysu.edu.tw
Layered materials processing dangling bond-free surface have provided multiple degrees of freedom for assembling the van der Waals heterostructures with atomic-scale control over the electronic states without the restriction of lattice matching. Gallium selenide (GaSe) and indium selenide (InSe), group-III monochalcogenides (MX, M = Ga and In; X = S and Se), process tunable direct bandgap in multilayer, whereas transition-metal dichalcogenides has a direct bandgap only in monolayer. Apart from their peculiar thickness-dependent optoelectronic properties, the tendency of forming native oxides on surface layers renders tunability of their carrier densities. In this talk, some of our recent works in study of (i) persistent electrical-gating effect realized by interface engineering in few-layered InSe, (ii) potential mapping of InSe field-effect transistor by operando scanning photoelectron microscopy, (iii) determination of Schottky barrier height at the interface of indium metal and InSe by microbeam photoelectron microscope will be highlighted.

Keywords: layered materials, interface engineering, operando photoelectron microscopy, Schottky barrier height