Fabricating InGaN-LEDs on (-2 0 1) β-Ga2O3 substrate and Sapphire substrate

Shun-Ming Hung^2*, Yen-Chun Chen², Yi-Yun Yeh¹, Yu-Pin Lan¹

¹Institute of Lighting and Energy Photonics, College of Photonics National Chiao Tung University, Tainan, Taiwan
²Institute of Photonic System, College of Photonics National Chiao Tung University, Tainan, Taiwan

* Presenter:Shun-Ming Hung, email:tfkc339@gmail.com

In this paper, we fabricated InGaN-LEDs which were grown on (-2 0 1) β-Ga2O3 substrate and compared the device performance with the one on sapphire substrate. We did the measurements which include electroluminescence(EL) spectrum, and Light-Current-Voltage (LIV) curve. The results show that LED on (-2 0 1) β-Ga2O3 substrate is competitive. Today, β-Ga2O3 is usually used in high power devices, but we successfully used β-Ga2O3 in optical devices.

Keywords: InGaN, β-Ga2O3, LIV curve, LED, Electroluminescence spectrum