Growth and Electronic Structures of 2D Pb Islands on Nb-Doped STO(001)

Guan-Yu Chen^1*, Bo-You Liu¹, Li-Wei Chang¹, Deng-Sung Lin¹, Pin-Jui Hsu¹

¹Department of Physics, National Tsing Hua University, Hsinchu, Taiwan

* Presenter:Guan-Yu Chen, email:xxx2736338@gmail.com

We investigate the growth mechanism and quantum well states (QWSs) of Pb islands on Nb-doped SrTiO₃(001) by scanning tunneling microscopy (STM) and spectroscopy (STS). In contrast to Pb/Si(111), Pb/Cu(111) and Pb/Ag(111), there is no wetting layer of Pb formed on Nb-doped SrTiO₃(001) substrate and different types of 2D Pb islands have been revealed from growth statistics. According to phase accumulation model, QWSs offer details on vacuum barrier phase φ_B and crystal interface phase φ_C, which might provide further insights on the enhanced superconducting temperature of 2D Pb islands reported lately.

Keywords: 2D island, Quantum well state, Phase accumulation model