Organic anti-ambipolar transistor for multi-valued logic circuit

Yutaka Wakayama^1*

¹International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan

* Presenter:Yutaka Wakayama, email:WAKAYAMA.Yutaka@nims.go.jp

The main purpose of this study is to develop a novel organic field-effect transistor for multi-valued inverter, in which a sharp increase and decrease in drain current is induced by gate bias voltage. This unique property is just upside down to that of an ambipolar transistor. Therefore, this is called “anti-ambipolar transistor”. A uniqueness of the device configuration can be ascribed to a partially overlapped p-n hetero-interface at the center of a transistor channel. The observed non-linear carrier transport is analogous to that of a negative differential resistance and, therefore, this device has potential for multi-level logic circuits.
This presentation consists of three parts. First, fundamental operation mechanism is discussed. Second, improvements of device performance are presented. The interfaces at metal/semiconductor and dielectric/semiconductor are well designed aiming to reduce the operation voltage. In the third part, application to a multi-valued organic transistor is demonstrated [1]. Here, ternary logic states (0, 1/2, 1) are achieved.
[1] K. Kobashi, R. Hayakawa, T. Chikyow, Y. Wakayama, Nano Letters,18, 4355 (2018)

Keywords: multi-valued logic circuit, pn heterointerface, negative differential resistance, organic field-effect transistor